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| SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTORS ISSUE 2 FEBRUARY 1995 FEATURES * 60 Volt VCEO * 3 Amp continuous current * Low saturation voltage COMPLEMENTARY TYPE FZT751 PARTMARKING DETAIL FZT651 FZT651 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL MIN. V(BR)CBO 80 V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 70 100 80 40 140 0.12 0.43 0.9 0.8 200 200 170 80 175 45 800 30 60 5 0.1 10 0.1 0.3 0.6 1.25 1 300 MHz ns ns pF TYP. SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg MAX. UNIT V V V A A A VALUE 80 60 5 6 3 2 -55 to +150 CONDITIONS. IC=100A IC=10mA* IE=100A UNIT V V V A A W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Switching Times Output Capacitance V V V V VCB=60V VCB=60V,Tamb=100C VEB=4V IC=1A, IB=100mA* IC=3A, IB=300mA* IC=1A, IB=100mA* IC=1A, VCE =2V* IC=50mA, VCE =2V* IC=500mA, VCE =2V* IC=1A, VCE =2V* IC=2A, VCE =2V* IC=100mA, VCE =5V f=100MHz IC=500mA, VCC =10V IB1=IB2=50mA VCB =10V, f=1MHz fT t on t off Cobo *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 207 FZT651 TYPICAL CHARACTERISTICS 0.6 0.5 225 0.4 - (Volts) IC/IB=10 0.3 - Gain 175 VCE=2V 125 0.2 V 0.1 h 75 0 0.0001 0.001 0.01 0.1 1 10 0 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 1.4 1.2 1.2 1.0 1.0 - (Volts) - (Volts) IC/IB=10 VCE=2V 0.8 0.8 V 0.6 V 0.6 0.4 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC 10 VBE(on) v IC td tr tf ns 140 ts ns 1400 Single Pulse Test at Tamb=25C IB1=IB2=IC/10 1 120 1200 ts Switching time 100 1000 80 800 td 0.1 DC 1s 100m s 10ms 1ms 100s 60 600 tf 40 400 tr 20 200 0 0 0.01 0.1 1 0.01 0.1 1 10 100 VCE - Collector Emitter Voltage (V) IC - Collector Current (Amps) Safe Operating Area 3 - 208 Switching Speeds |
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